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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-510
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Bulletin I25180/A
ST173C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
330A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST173C..C
330 55 610 25 4680 4900 110 100 1000 to1200 15 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s C
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ST173C..C Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V
ST173C..C 10 12 1000 1200
VRSM , maximum non-repetitive peak voltage V
1100 1300
I DRM /I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 760 730 600 350 50 V DRM 50 40
ITM 180 el 660 590 490 270 50 50 55 1200 1260 1200 850 50 V DRM 40
o
ITM 100s 1030 1080 1030 720 50 55 5570 2800 1620 800 50 V DRM 40
ITM
Units
4920 2460 1390 680 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST173C..C
330 (120) 55 (85) 610 4680 4900 3940 4120
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
It
2
Maximum I t for fusing
2
110 100 77 71 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1100
KA2s
t = 0.1 to 10ms, no voltage reapplied
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ST173C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
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ST173C..C Series
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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ST173C..C Series
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ST173C..C Series
Fig. 17 - Gate Characteristics
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ST173C..C Series
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r
t1
ST173C..C Units
2.07 1.55 1.61 0.87 m 0.77 600 1000 mA V
Conditions
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
V T(TO)1 Low level value of threshold
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Low level value of forward slope resistance
r
t2
High level value of forward slope resistance Maximum holding current Typical latching current
IH IL
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST173C..C Units
1000 1.1 Min 15 Max 30 s A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s
p
Typical delay time
Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, t = 500s, dv/dt: see table in device code
p
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST173C..C Units
500 40 V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST173C..C Units
60 10 10 20 V W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms
p
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
TJ = TJ max, t 5ms
p
5 200 3 20 0.25 mA TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST173C..C Series
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST173C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
50
TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.016 0.019 0.024 0.035 0.060 Single Side Double Side 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
17
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 15 18 t (s) 20 q 25 30 20 CL CP CK CJ -50 -DP DK DJ DH 100 -EP EK EJ EH 200 400 --FP * -FK * HK FJ HJ FH HH
*Standard part number.
All other types available only on request.
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ST173C..C Series
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
42 (1.65) MAX. 28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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